Gallium nitride is a promising electro-optical material system. Gallium nitride nanowires present a path to realizing compact light emitting diodes (LEDs) and novel scanned probes. I will cover NIST's work on core shell n-p nanowires for LED development. In addition, I will present the selective area growth of nanowires for scanned probe development. Finally I will present the fabrication of single nanowire probes using a focused ion beam.