THURSDAY, Jan 18, 12 p.m. 11 FLOOR OF THE GAMOW TOWER
Alexander Altland
ITP, University of Cologne,
Germany
Low energy theory of disordered graphene
At low values of external doping graphene displays a wealth of unconventional transport properties. Perhaps most strikingly, it supports a robust 'metallic' regime, with conductance of the order of the conductance quantum. I will discuss how a combination of mean field and bosonization methods can be applied to explore the large scale transport properties of the system. It turns out that, irrespective of the doping level, disordered graphene is subject to common mechanisms of Anderson localization. However, at low doping a number of renormalization mechanisms conspire to protect the conductivity of the system, to an extend that strong localization may not be seen even at temperatures much smaller than those underlying present experimental work.